Aluminum nitride (AIN) is a novel wide bandgap semiconductor. This research focused on optical properties of AIN as well as native oxide properties of single crystal AIN. Refractive index, absorption coefficient, and oxide film thickness were measured using absorption spectrophotometer and ellipsometer. Additionally, we were also interested in characterizing the oxide and studying its growth dynamics. To achieve this, we used successive ellipsometric measurements. Transmission measurements from the spectrophotometer were analyzed, and absorption spectra between 200 and 2500 nm was numerically extracted. To analyze ellipsometric data, a two parameter analytical algorithm was used. This calculated the best fit parameters for the oxide thickness and refractive index using a theoretical model.
Bugno, Jacob and Biswas, Sujit. "Optical Properties and Growth Dynamics of Oxides on Single Crystal AIN." The Review: A Journal of Undergraduate Student Research 7 (2004): 12-19. Web. [date of access]. <http://fisherpub.sjfc.edu/ur/vol7/iss1/5>.